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Commutation à basse température de chalcogénures vitreux semiconducteursKVASKOV, V. B; PAROL, N. V; IOFIS, N. A et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 11, pp 2079-2082, issn 0015-3222Article

Atomistic simulations of lattice defects in tungstenMROVEC, M; ELSÄSSER, C; GUMBSCH, P et al.International journal of refractory metals & hard materials. 2010, Vol 28, Num 6, pp 698-702, issn 0958-0611, 5 p.Conference Paper

Phase ordering induced by defects in chaotic bistable mediaECHEVERRIA, C; TUCCI, K; COSENZA, M. G et al.The European physical journal. Special topics. 2007, Vol 143, pp 249-251, 3 p.Conference Paper

Elastic monopole modelling of defects in thermoelastic mediaZHOU, S. A; HSIEH, R. K. T.International journal of engineering science. 1985, Vol 23, Num 11, pp 1197-1202, issn 0020-7225Article

The force on a lattice defect in an elastic bodyBATRA, R. C.Journal of elasticity. 1987, Vol 17, Num 1, pp 3-8, issn 0374-3535Article

Eléments fondamentaux de métallurgie pour le soudage. II = Basic principles governing welding metallurgy. IIDEJIEUX, J.Soudage et techniques connexes. 1984, Vol 6, Num 6, pp 165-168, issn 0246-0963Article

Système d'équations statiques pour l'analyse de non-linéarité de la concentration lors de la dilatation d'un cristal contenant des impuretésMESHCHERYAKOV, V. V.Izvestija vysših učebnyh Zavedenij. Černaja Metallurgija. 1983, Num 9, pp 138-139, issn 0368-0797Article

Lattice Defects Diffuse Scattering from Thin Films of a Ge-Si System with Low-Energy Ar+ and Xe+ Bombardment During Molecular Beam Epitaxy (MBE) Growth : Neutron and X-Ray Diffraction Studies of Advanced Materials V-CentennialROZENAK, Paul.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2013, Vol 44, Num 1, pp 102-114, issn 1073-5623, 13 p.Conference Paper

Le carbone, impureté substitutionnelle, et la lacune d'oxygène dans le dioxyde de silicium vitreuxDIANOV, E. M; SOKOLOV, V. O; SULIMOV, V. B et al.Fizika i himiâ stekla. 1987, Vol 13, Num 5, pp 774-776, issn 0132-6651Article

The use of ion scattering for the study of radiation damage in metals and semiconductors. I: High energy scattering studies. II: Low energy scattering studies of ion bombardment induced surface damage = Utilisation de la diffusion d'ions pour l'étude des défauts d'irradiation dans les métaux et les semiconducteurs. I: Etudes de diffusion à haute énergie. II: Etudes de diffusion à basse énergie des défauts de surface induits par irradiation avec des ionsARMOUR, D. G.Vacuum. 1982, Vol 32, Num 9, issn 0042-207X, 573Article

CONTRIBUTION A L'ETUDE DE LA RESISTIVITE ELECTRIQUE DES DEFAUTS DANS L'URANIUM ET LE GADOLINIUMLEMARIE PH.1972; ; S.L.; DA. 1972; PP. 1-34; H.T. 16; BIBL. 2 P. 1/2; (THESE DOCT. 3EME CYCLE, SPEC. METALL.; UNIV. PARIS-SUD; 1972)Thesis

DSC and TEM analysis of lattice defects governing the mechanical properties of an ECAP-processed magnesium alloyMINGLER, B; KULYASOVA, O. B; ISLAMGALIEV, R. K et al.Journal of materials science. 2007, Vol 42, Num 5, pp 1477-1482, issn 0022-2461, 6 p.Article

New method of deriving interatomic potentials from data obtained from first-principles calculations = Nouvelle méthode de dérivation des potentiels interatomiques à partir de données obtenues d'après des calculs des premiers principesMACHLIN, E. S; BEILIANG LOH.Physical review. B, Condensed matter. 1984, Vol 29, Num 6, pp 3719-3721, issn 0163-1829Article

Positron lifetime in polycrystalline gadolinium = Positronenlebensdauer in polykristallinem GadoliniumGOMEZ, A.M; SERNA, J.Physica status solidi. A. Applied research. 1984, Vol 83, Num 2, pp K131-K133, issn 0031-8965Article

Influence of Lattice Defects on the Grain Growth Kinetics of Nanocrystalline Fluorite : Symposium: Neutron and X-Ray Studies of Advanced Materials VI: Diffraction Centennial and BeyondABDELLATIEF, Mahmoud; LAUSI, Andrea; PLAISIER, Jasper R et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2014, Vol 45, Num 1, pp 123-128, issn 1073-5623, 6 p.Article

Behavior of hydrogen in Al-Mg alloys investigated by means of hydrogen microprint techniqueIHARA, Tomoaki; ITOH, Goroh.Keikinzoku. 2003, Vol 53, Num 12, pp 575-581, issn 0451-5994, 7 p.Article

A study of behavior of lattice defects by means of HVEM in situ experiments and real-time X-ray topographyIMURA, T.Materials transactions - JIM. 1991, Vol 32, Num 9, pp 793-806, issn 0916-1821Conference Paper

Lattice imaging of disclinations in carbon fibersBOURRAT, X; ROCHE, E. J; LAVIN, J. G et al.Carbon (New York, NY). 1990, Vol 28, Num 1, pp 236-238, issn 0008-6223Article

Lattice defects on linear isotropic dielectricsNOWACKI, J. P; HSIEH, R. K. T.International journal of engineering science. 1986, Vol 24, Num 10, pp 1655-1666, issn 0020-7225Article

Copper precipitation in long-time processed transistor samples = Kupferausscheidungen in langzeitbehandelten TransistorprobenGLEICHMANN, R; BREITENSTEIN, O; MOHR, U et al.Crystal research and technology (1979). 1983, Vol 18, Num 9, pp 1115-1123, issn 0232-1300Article

On the scattered-wave X alpha calculation of potential energy surfaces for transition metal impurities in ionic lattices. Mn2+ and Cu+ in NaFTILL, S. J; PARSONS, I. W; HUKE, J. P et al.The Journal of chemical physics. 1991, Vol 95, Num 5, pp 3596-3606, issn 0021-9606Article

A theoretical model on the generation of the hydrogen induced defects during cathodic charging = Un modèle théorique pour la génération de défauts induits par l'hydrogène pendant le chargement cathodiqueJONG-LAM LEE; JAI-YOUNG LEE.Scripta metallurgica. 1985, Vol 19, Num 3, pp 341-346, issn 0036-9748Article

Caractéristiques de la diffraction de Lauë dans les cristaux présentant des défauts de type colonnaireGUDZENKO, G. I; MOLODKIN, V. B; OLIKHOVSKIJ, S. I et al.Metallofizika (Kiev). 1983, Vol 5, Num 3, pp 10-15, issn 0204-3580Article

La molécule de Cl2 dans une lacune d'oxygène du réseau amorphe du dioxyde de siliciumDIANOV, E. M; SOKOLOV, V. O; SULIMOV, V. B et al.Fizika i himiâ stekla. 1987, Vol 13, Num 6, pp 917-919, issn 0132-6651Article

Déplacement par résonance des niveaux des plasmons et des atomes localisés en interaction des pores remplis de gaz dans les métauxGOLINEJ, I. YU; SUGAKOV, V. I.Metallofizika (Kiev). 1985, Vol 7, Num 2, pp 108-109, issn 0204-3580Article

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